Diodes has introduced two new series of Automotive-compliant bipolar transistors AImed at improving power density and effICiency in space-constrained vehicle systems.

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction efficiency and thermal performance, supporting a wide voltage range suitable for 12 V, 24 V, and 48 V systems.

According to Diodes, the transistors are intended for tasks such as gate driving MOSFETs and IGBTs, power line and load switching, low-dropout voltage regulation, DC-DC conversion, and driving motors, solenoids, relays, and actuators. Rated for continuous operation up to +175°C and offering high ESD robustness (HBM 4kV, CDM 1kV), they are built to withstand harsh automotive environments.

Both series are housed in the ultra-compact PowerDI 3333-8 package, measuring just 3.3mm x 3.3mm. This design reduces PCB footprint by up to 75% compared to traditional SOT223 packages, freeing space for additional functionality. A large underside heatsink provides ultra-low thermal resistance of 4.2°C/W, while the side-wall plateable feature improves automated optical inspection visibility and strengthens solder joints, supporting reliable and efficient Manufacturing.

The DXTN/P 78Q and 80Q series span BVCEO ratings from 30V to 100V and offer robust current handling. The 80Q series delivers higher performance for demanding designs, with continuous ratings up to 10A and peak pulse capability of 20A.

Ultra-low saturation voltage - just 17mV at 1A - and on-state resistance as low as 12mΩ help minimise conduction losses, enabling cooler operation and improved efficiency. Diodes claims these features can reduce conduction losses by up to 50% compared to previous generations, easing thermal management challenges.

In addition to automotive applications, the DXTN/P 78 and 80 series is available for industrial and commercial use.